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CS4J60FA9-G Datasheet, MOSFET, HUAJING MICROELECTRONICS

CS4J60FA9-G Datasheet, MOSFET, HUAJING MICROELECTRONICS

CS4J60FA9-G

datasheet Download (Size : 340.56KB)

CS4J60FA9-G Datasheet
CS4J60FA9-G

datasheet Download (Size : 340.56KB)

CS4J60FA9-G Datasheet

CS4J60FA9-G Features and benefits

CS4J60FA9-G Features and benefits

l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications: Power switch circuit of ad.

CS4J60FA9-G Application

CS4J60FA9-G Application

Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): ○R 600 V 4A 25 W 1.5 Ω Sym.

CS4J60FA9-G Description

CS4J60FA9-G Description

CS4J60F A9-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi.

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TAGS

CS4J60FA9-G
Silicon
N-Channel
Power
MOSFET
HUAJING MICROELECTRONICS

Manufacturer


HUAJING MICROELECTRONICS

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